Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

Overview

There has been tremendous progress made in the research of novel nanotechnology for future nanoelectronic applications. In particular, several emerging nanoelectronic devices such as carbon-nanotube Field-Effect Transistors (FETs), Si nanowire FETs, and planar III - V compound semiconductor (e.g., InSb, InAs) FETs, all hold promise as potential device candidates to be integrated onto the silicon platform for enhancing circuit functionality and also for extending Moore's Law. For high-performance and low-power logic transistor applications, it is important that these research devices are frequently benchmarked against the existing Si logic transistor data in order to gauge the progress of research. In this paper, the author uses four key device metrics to compare these emerging nanoelectronic devices to the state-of-the-art planar and nonplanar Si logic transistors.